| PART |
Description |
Maker |
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| ISB-A27-0 |
150 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Ultrathin Miniature Package 4-channel N-channel MOSFET Array
|
Sanyo Semicon Device
|
| HI3-0506A-5Z |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel,CMOS Analog MUXs with Active Overvoltage Protection
|
Intersil Corporation
|
| FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
| FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDS6990AS FDS6990AS_NL FDS6990ASNL |
Dual 30V N-Channel PowerTrench SyncFET 7500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDG6313N FDG6313NNL |
25V Dual N-Channel, Digital FET 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
|
| BSS84DW2 BSS84DW-7-F |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 130 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes, Inc.
|
| BA3506AF-DXT1 BA3420AL-DX BA3410AF-DXE1 BA5412-DX |
0.069 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
2 CHANNEL, AUDIO PREAMPLIFIER, PZIP18
1 CHANNEL, AUDIO PREAMPLIFIER, PDSO16
2 CHANNEL, AUDIO AMPLIFIER, PSIP12
PLL FREQUENCY SYNTHESIZER, 130 MHz, PDSO20
1 CHANNEL, AUDIO PREAMPLIFIER, PSIP7
5 W, 2 CHANNEL, AUDIO AMPLIFIER, PSIP12
|
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
|
